T660N26TOFXPSA1

T660N26TOFXPSA1

$139.18
  • Description:SCR MODULE 2600V 1500A DO200AB
  • Series:-

SKU:a437c6696855 Category: Brand:

  
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Product Detailed Parameters

  • Description:SCR MODULE 2600V 1500A DO200AB
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray
  • Structure:Single
  • Number of SCRs, Diodes:1 SCR
  • Voltage - Off State:2.6 kV
  • Current - On State (It (AV)) (Max):660 A
  • Current - On State (It (RMS)) (Max):1500 A
  • Current - Non Rep. Surge 50, 60Hz (Itsm):13000A @ 50Hz
  • Operating Temperature:-40°C ~ 125°C
  • Mounting Type:Clamp On
  • Package / Case:DO-200AB, B-PUK
  • Voltage - Gate Trigger (Vgt) (Max):2.2 V
  • Current - Gate Trigger (Igt) (Max):250 mA
  • Current - Hold (Ih) (Max):300 mA
  • Grade:-
  • Qualification:-

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T660N26TOFXPSA1

Overview

The T660N26TOFXPSA1 is a high-power Silicon-controlled rectifier (SCR) module manufactured by Infineon Technologies. It belongs to the phase control thyristor category, designed for demanding industrial power applications. The component features a robust construction suitable for heavy-duty electrical environments. Key specifications include a rated average on-state current of 660 amperes and a repetitive peak reverse voltage of 2600 volts. This configuration ensures reliable operation in high-voltage direct current transmission and large-scale motor drive systems where precise phase control is required.

Feature Summary

  • Engineered for high-current phase control applications with robust thermal stability
  • Designed for reliable operation in high-voltage industrial power conversion systems
  • Constructed using silicon technology for durable performance under extreme electrical stress

Applications

  • High-voltage direct current (HVDC) transmission systems
  • Industrial motor drives requiring precise phase control
  • Static var generators for power factor correction
  • Large-scale rectifier bridges in industrial processing

Procurement Notes

Verify the exact part number suffix against official Infineon documentation to confirm specific testing or screening levels. Ensure compatibility with existing cooling infrastructure given the high power density. Cross-reference datasheet revisions to confirm parameter consistency before finalizing procurement orders.

Selection Notes

Select this component based on the specific requirement for 660A continuous current handling at 2600V blocking capability. Evaluate thermal management solutions to maintain junction temperature within safe operating limits during peak load conditions. Confirm that the gate triggering characteristics align with the available control circuitry capabilities.

Part Context

This device is part of Infineon's extensive portfolio of high-power semiconductor solutions. It complements other phase control thyristors in the series, offering standardized mounting and electrical interfaces. The product line supports global industrial infrastructure projects requiring proven reliability and long-term availability for critical power electronics applications.

Replacement Considerations

Consult official Infineon substitution guides for compatible alternatives. Verify pinout and mechanical dimensions match existing board layouts when considering cross-brand replacements. Ensure equivalent electrical ratings are maintained to prevent system failure.

T660N26TOFXPSA1T660N26TOFXPSA1
$139.18
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