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Product Detailed Parameters
- Description:DIODE BG-T5814K0-1
- Series:-
- Mfr:Infineon Technologies
- Package:Tray
- Structure:Single
- Number of SCRs, Diodes:1 SCR
- Voltage - Off State:2.6 kV
- Current - On State (It (AV)) (Max):745 A
- Current - On State (It (RMS)) (Max):1500 A
- Current - Non Rep. Surge 50, 60Hz (Itsm):13000A @ 50Hz
- Operating Temperature:-40°C ~ 125°C
- Mounting Type:Clamp On
- Package / Case:TO-200AB, A-PUK
- Voltage - Gate Trigger (Vgt) (Max):2.2 V
- Current - Gate Trigger (Igt) (Max):250 mA
- Current - Hold (Ih) (Max):300 mA
- Grade:-
- Qualification:-
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Overview
The T740N26TOFPRXOSA1 is a phase control thyristor module manufactured by Infineon Technologies. It features a single configuration with a maximum repetitive peak reverse voltage of 2600 V and a nominal on-state current of 740 A. The device utilizes silicon technology and is housed in a TO-200AB (Disk) package designed for screw mounting. Key electrical characteristics include a gate trigger voltage of up to 2.2 V and a gate trigger current of up to 250 mA. The module supports a circuit turn-off time of 300 µs and operates within a junction temperature range of -40 °C to 125 °C.
Feature Summary
- High-voltage phase control capability for industrial power applications
- Robust silicon construction for reliable operation in demanding environments
- Standardized disk package design facilitating efficient thermal management
Applications
- Industrial motor drives and frequency converters
- HVDC transmission systems
- Static VAR compensators
Procurement Notes
Verify the exact suffix against official Infineon documentation, as variations may indicate specific testing or packaging configurations. Confirm RoHS compliance status through the manufacturer's material declaration. Ensure the ordering part number matches the required voltage and current ratings for the target application before procurement.
Selection Notes
Select this component for high-power AC/DC conversion circuits requiring precise phase control. Evaluate the thermal resistance and cooling requirements based on the 740 A continuous current rating. Ensure the gate drive circuit can supply the specified trigger parameters within the operational temperature range.
Part Context
This model belongs to Infineon's high-power thyristor disc series, designed for heavy-duty industrial applications. It shares the physical form factor with other devices in the T740N family but differs in blocking voltage and current handling capabilities. The TO-200AB package is standard for modules requiring direct heatsink mounting.
Replacement Considerations
Direct replacements must match the 2600 V / 740 A specification and TO-200AB footprint. Verify compatibility with existing gate drive circuits and thermal interface materials. Cross-reference with Infineon's selection guide for equivalent performance in voltage and current ratings.
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