T8M10T800UB

Overview

The T8M10T800UB is a silicon bidirectional thyristor (TRIAC) manufactured by Diodes Incorporated, housed in a TO220AB package. It supports an RMS on-state current of 8 A and a repetitive peak off-state voltage of 800 V. The device operates within a junction temperature range of -40°C to +125°C. Key electrical parameters include a maximum on-state voltage of 1.6 V at 8 A, a gate trigger current of 10 mA, and a holding current of 15 mA. Thermal resistance values are specified as 10.5 °C/W (junction-to-ambient), 1.9 °C/W (junction-to-case), and 1.7 °C/W (junction-to-lead).

Feature Summary

• Glass passivation provides enhanced voltage ruggedness and reliability.
• Capable of triggering in three quadrants for versatile control applications.
• Manufactured with lead-free finish and complies with RoHS directives.
• Utilizes halogen and antimony-free green molding compound.

Applications

• General-purpose motor controls
• Power control tools and electric drills
• Heating systems
• Home appliance fan controls and light dimmers

Procurement Notes

Verify the specific ordering suffix against official Diodes Incorporated documentation to ensure correct packaging quantities and carrier types. Confirm that the component meets all applicable regulatory standards required for your target market before finalizing procurement orders.

Selection Notes

Select this component based on its 800 V blocking capability and 8 A continuous current rating. Ensure the gate drive circuit can supply the required 10 mA trigger current. Evaluate thermal management requirements using the provided thermal resistance data to maintain safe operating temperatures under expected load conditions.

Part Context

This part belongs to the T8MxxT800UB product family from Diodes Incorporated. It shares identical mechanical dimensions and core electrical ratings with the T8M35T800UB variant, differing primarily in gate sensitivity specifications. Both devices utilize the same TO220AB Type WX package configuration.

Replacement Considerations

The T8M35T800UB is a direct functional substitute within the same series, distinguished only by higher gate trigger current requirements. Verify compatibility with existing gate drive circuits when substituting between these variants.

FAQ

What is the maximum non-repetitive surge peak on-state current?

The T8M10T800UB supports a non-repetitive surge peak on-state current of 55 A for a full cycle at 50 Hz, or 60 A at 60 Hz.

How does the gate trigger current vary with temperature?

The gate trigger current typically decreases as the junction temperature increases, as illustrated in the typical characteristic curves provided in the datasheet.

What is the rate of rise of off-state voltage?

The device has a rated rate of rise of off-state voltage (dV/dt) of 40 V/µs at a junction temperature of +125°C.