T8M10T800UD

T8M10T800UD

$0.54
  • Description:THYRISTOR TO220AB TUBE 50PCS
  • Series:-

SKU:71502e877456 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:THYRISTOR TO220AB TUBE 50PCS
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Bulk
  • Triac Type:Standard
  • Voltage - Off State:800 V
  • Current - On State (It (RMS)) (Max):8:00 AM
  • Voltage - Gate Trigger (Vgt) (Max):1.5 V
  • Current - Non Rep. Surge 50, 60Hz (Itsm):55A, 60A
  • Current - Gate Trigger (Igt) (Max):10 mA
  • Current - Hold (Ih) (Max):15 mA
  • Configuration:Single
  • Operating Temperature:-40°C ~ 125°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO220AB (Type WX)
  • Grade:-
  • Qualification:-

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T8M10T800UD

Overview

The T8M10T800UD is a silicon bidirectional thyristor (TRIAC) manufactured by Diodes Incorporated. It features an 800V repetitive peak off-state voltage and an 8A RMS on-state current rating at +125°C. The device supports triggering in three quadrants with a gate trigger current of 10mA for the T8M10 variant. It operates within a junction temperature range of -40°C to +125°C and utilizes a TO-220AB package.

Feature Summary

  • Glass passivated construction for enhanced voltage ruggedness and reliability
  • High voltage capability up to 800V
  • High junction operating temperature capability reaching +125°C
  • Triggering functionality available in three quadrants

Applications

  • General-purpose motor controls
  • Power control tools, electric drills, heating systems
  • Home applications including fan controls, light dimmers, food processors, and coffee machines

Procurement Notes

Verify the specific part number suffix against official Diodes Incorporated documentation to ensure correct gate trigger current specifications. Confirm that the TO-220AB packaging aligns with the required thermal management and mechanical mounting constraints for the target application design.

Selection Notes

Select the T8M10T800UD when an 8A RMS current capacity and 800V blocking voltage are required. Ensure the circuit design accommodates the 10mA gate trigger current specification. Verify that the three-quadrant triggering mode meets the control logic requirements of the intended switching application.

Part Context

This component belongs to the T8MxxT800UD series of silicon bidirectional thyristors from Diodes Incorporated. The series includes variants differentiated primarily by their gate trigger current requirements, such as the T8M35T800UD which utilizes a 35mA gate trigger current.

Replacement Considerations

The T8M35T800UD serves as a direct functional substitute within the same product family, distinguished only by its higher gate trigger current requirement of 35mA compared to the 10mA of the T8M10T800UD.

T8M10T800UDT8M10T800UD
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