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The T8M10T800UD is a silicon bidirectional thyristor (TRIAC) manufactured by Diodes Incorporated. It features an 800V repetitive peak off-state voltage and an 8A RMS on-state current rating at +125°C. The device supports triggering in three quadrants with a gate trigger current of 10mA for the T8M10 variant. It operates within a junction temperature range of -40°C to +125°C and utilizes a TO-220AB package.
Verify the specific part number suffix against official Diodes Incorporated documentation to ensure correct gate trigger current specifications. Confirm that the TO-220AB packaging aligns with the required thermal management and mechanical mounting constraints for the target application design.
Select the T8M10T800UD when an 8A RMS current capacity and 800V blocking voltage are required. Ensure the circuit design accommodates the 10mA gate trigger current specification. Verify that the three-quadrant triggering mode meets the control logic requirements of the intended switching application.
This component belongs to the T8MxxT800UD series of silicon bidirectional thyristors from Diodes Incorporated. The series includes variants differentiated primarily by their gate trigger current requirements, such as the T8M35T800UD which utilizes a 35mA gate trigger current.
The T8M35T800UD serves as a direct functional substitute within the same product family, distinguished only by its higher gate trigger current requirement of 35mA compared to the 10mA of the T8M10T800UD.