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The T8M10T800UE-13 is a bidirectional thyristor (triac) manufactured by Diodes Incorporated, designed for surface-mount applications in the TO-252 package. It features an RMS on-state current of 8 A and a non-repetitive peak on-state current of 60 A. The device supports a rated repetitive peak off-state voltage (VDRM) of 800 V with a maximum off-state leakage current of 5 uA at VDRM. Key electrical characteristics include an on-state voltage of 1.6 V, a maximum holding current of 50 mA, a gate trigger voltage of 1.5 V, and a gate trigger current of 35 mA. It operates within a temperature range of -40 C to +125 C.
Verify the specific suffix 'UE-13' against official Diodes Incorporated documentation to confirm packaging details and tape-and-reel specifications. Ensure component authenticity through authorized distribution channels. Cross-reference datasheet revisions to confirm compliance with current RoHS standards and material declarations prior to final procurement decisions.
Select this component when an 8 A RMS current rating and 800 V blocking voltage are required in a compact SMD form factor. Compare gate trigger current requirements against available drive circuitry capabilities. Evaluate thermal management needs based on the TO-252 package's power dissipation limits and the intended operating ambient temperature range.
This part belongs to the T8M series of triacs from Diodes Incorporated, which offers various current ratings and package options. The T8M10T800UE-13 specifically targets applications needing moderate current handling in a surface-mount configuration, distinguishing it from higher-current through-hole variants like the T12M series or lower-current SOT-223 models.
Potential substitutes include other 8 A, 800 V triacs in TO-252 packages from manufacturers such as Littelfuse or STMicroelectronics. Verify pinout compatibility, gate sensitivity parameters, and thermal resistance values before substitution.