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The T8M35T800UB is a silicon bidirectional thyristor (Triac) manufactured by Diodes Incorporated, housed in a TO220AB package. It features an 8 A RMS on-state current and an 800 V repetitive peak off-state voltage. The device supports triggering in three quadrants with a maximum gate trigger current of 35 mA and a holding current of 50 mA. It operates within a junction temperature range of -40°C to +125°C and includes glass passivation for reliability.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packing quantity and carrier type. Confirm RoHS compliance status and environmental declarations directly from the datasheet before procurement. Ensure the component matches the required thermal resistance specifications for the intended heatsink design.
Select this Triac for AC switching applications requiring 8 A continuous current handling at 800 V blocking voltage. Verify that the gate drive circuit can supply at least 35 mA to ensure reliable turn-on across all three quadrants. Check the dI/dt capability and commutation limits if used without a snubber circuit in inductive loads.
This component belongs to the T8MxxT800UB series of silicon bidirectional thyristors. It shares the same electrical ratings and mechanical outline as the T8M10T800UB variant, differing primarily in gate trigger sensitivity parameters. Both variants utilize the TO220AB package for through-hole mounting.
The T8M10T800UB is a direct functional substitute within the same product family, sharing identical voltage, current, and package specifications. Verify gate trigger current compatibility when swapping between these variants.