T8M35T800UD

Overview

The T8M35T800UD is a silicon bidirectional thyristor (triac) manufactured by Diodes Incorporated in a TO220AB package. It supports an RMS on-state current of 8 A and a repetitive peak off-state voltage of 800 V. The device operates within a junction temperature range of -40°C to +125°C. Key electrical parameters include a maximum on-state voltage of 1.6 V at 8 A, a gate trigger current of up to 35 mA, and a holding current of up to 50 mA. Non-repetitive surge peak on-state current reaches 55 A at 50 Hz and 60 A at 60 Hz.

Feature Summary

• Glass passivation provides enhanced voltage ruggedness and long-term reliability.
• Internally insulated package design ensures safety compliance for direct heatsink mounting.
• Capable of triggering in three quadrants for simplified gate drive circuitry.
• Manufactured using lead-free, halogen-free, and antimony-free materials.

Applications

• General-purpose motor controls
• Power control tools and electric drills
• Heating systems and home appliance fan controls
• Light dimmers and food processors

Procurement Notes

Verify the specific ordering suffix against official distributor catalogs to confirm packaging quantities and carrier types. Confirm RoHS compliance status and environmental declarations directly with the manufacturer or authorized supply chain partners before finalizing procurement orders.

Selection Notes

Select this component when an 800 V blocking capability and 8 A continuous conduction are required in a through-hole configuration. Ensure the application's thermal management strategy accommodates the specified thermal resistance values. Verify that the gate drive circuit can supply the necessary trigger current across the full operating temperature range.

Part Context

This part belongs to the T8MxxT800UD series of high-voltage triacs from Diodes Incorporated. It shares identical mechanical dimensions and core electrical ratings with the T8M10T800UD variant, differing primarily in gate sensitivity specifications. Both models utilize the same TO220AB Type WX package outline.

Replacement Considerations

The T8M10T800UD serves as a functional substitute within the same product family. Cross-manufacturer replacements require matching the 800 V rating, 8 A current capacity, TO220AB footprint, and thermal characteristics to ensure compatibility.

FAQ

What is the maximum rate of rise of off-state voltage (dV/dt)?

The maximum dV/dt is 2000 V/µs at a junction temperature of +125°C with the gate open.

Does the T8M35T800UD support snubberless operation?

Yes, the datasheet specifies a commutating dv/dt rating of 4.5 A/ms without a snubber circuit at +125°C.

What is the I²t value for fusing protection calculations?

The I²t value for fusing is 15.1 A²/µs with a pulse duration of 10 ms.