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The T8M35T800UE-13 is an 8 A RMS bidirectional thyristor (triac) manufactured by Diodes Incorporated, rated for a repetitive peak off-state voltage of 800 V. Housed in a TO-252 package with three leads, it supports through-hole mounting and operates within a junction temperature range of -40 °C to +125 °C. Key electrical characteristics include a maximum on-state voltage of 1.6 V, a holding current of up to 50 mA, and a gate trigger voltage of 1.5 V at a gate trigger current of 35 mA. The device exhibits a non-repetitive peak on-state current of 60 A and maintains a low off-state leakage current of 5 µA at the rated blocking voltage.
Verify component authenticity by cross-referencing the manufacturer part number T8M35T800UE-13 with official Diodes Incorporated documentation. Confirm that the received devices match the specified TO-252 package style and lead configuration. Ensure compliance with RoHS directives if required by the specific application standards. Validate datasheet parameters against the latest official release to guarantee functional integrity.
Select this triac when an 8 A RMS current rating and 800 V blocking voltage are required for through-hole assembly. The TO-252 package offers a compact footprint suitable for automated insertion processes. Consider the 35 mA gate trigger current requirement for driver circuit design. Evaluate thermal management needs based on the 1.6 V on-state voltage drop under load conditions.
This component belongs to the Triacs category within Diodes Incorporated's discrete semiconductor portfolio. It serves as a medium-power switching solution designed for general-purpose AC control applications. The product line emphasizes reliability and thermal performance for industrial-grade electronics requiring robust bidirectional conduction capabilities.
Direct substitutes must match the 8 A RMS current, 800 V voltage rating, and TO-252 package. Verify equivalent gate trigger characteristics and thermal specifications before implementation.