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The TB67H451AFNG,EL is a single-channel brushed DC motor driver IC manufactured by Toshiba Semiconductor and Storage. It utilizes BiCD process technology to deliver a maximum output current of 3.5A at supply voltages ranging from 4.5V to 44V, with an absolute maximum voltage rating of 50V. The device features low on-resistance MOSFETs (RDS(on) typically 0.6Ω–0.8Ω) and supports PWM constant current drive as well as direct PWM drive modes. It operates within a temperature range of -40°C to +85°C and is housed in an 8-HSOP package with a thermal pad.
Verify the specific suffix against official Toshiba documentation to confirm functional differences, particularly regarding over-current protection behavior. Ensure the HSOP-8 package dimensions and thermal pad requirements are compatible with the target PCB layout. Confirm RoHS compliance status through the manufacturer's latest datasheet before finalizing procurement specifications.
Select this component when automatic recovery from over-current faults is required, distinguishing it from the locking TB67H450 variant. It is suitable for applications needing high efficiency due to low MOSFET resistance. Ensure the design accommodates the thermal dissipation requirements of the HSOP-8 package with its bottom heat sink pad for reliable operation under continuous load conditions.
This part belongs to the TB67H45x series of single-channel brushed motor drivers. It shares core electrical characteristics with the TB67H450AFNG but differs in fault handling logic. The series is designed for compact motor control solutions in consumer electronics and industrial automation where space constraints and efficient thermal management are critical design factors.
TB67H450AFNG,EL: Functionally similar but features manual recovery over-current protection instead of automatic recovery.
The TB67H451AFNG automatically recovers from over-current states once the fault condition clears, whereas the TB67H450AFNG requires a manual reset or power cycle to resume operation after triggering protection.
The combined on-resistance of the high-side and low-side MOSFETs is typically between 0.6Ω and 0.8Ω.