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The TB67H451FNG,EL is a single-channel brushed DC motor driver IC manufactured by Toshiba Semiconductor and Storage using BiCD process technology. It features a half-bridge output configuration capable of driving loads with voltages up to 50V and continuous currents of 3.5A. The device supports four operational modes: forward, reverse, brake, and stop. Key electrical parameters include a supply voltage range of 4.5V to 44V, a maximum power dissipation of 2.85W, and an operating junction temperature range from -40°C to +85°C. It integrates low on-resistance MOSFETs with a typical RDS(on) of 0.6Ω to 0.8Ω.
Verify the specific suffix EL against the manufacturer's latest datasheet to confirm packaging details and compliance status. Ensure the design accounts for the thermal requirements associated with the P-HSOP-8 package and the specified power dissipation limits under actual load conditions.
Select this component when automatic recovery from fault states is required, distinguishing it from the TB67H450FNG which requires manual reset. Consider the 50V voltage rating and 3.5A current capacity for applications exceeding standard 40V/3A limits. Evaluate the thermal performance within the 8-SOIC package constraints for high-duty cycle operations.
This part belongs to the TB67H45x family of single-channel brushed motor drivers. It shares core architecture with the TB67H450FNG but differs in fault recovery behavior. The family utilizes Toshiba's proprietary BiCD process to integrate logic and power stages efficiently.
The TB67H450FNG is a related variant within the same series; however, it lacks automatic recovery from over-current events. Direct substitution requires verifying if manual reset functionality is acceptable for the application design.
It triggers over-current detection (ISD) and automatically recovers once the fault condition clears and the temperature drops, unlike the TB67H450FNG which requires manual intervention.
The combined on-resistance of the high-side and low-side MOSFETs is typically between 0.6Ω and 0.8Ω.