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The TCET1100G is a single-channel transistor output optocoupler manufactured by Vishay Semiconductor Opto Division. It integrates an NPN phototransistor with a gallium arsenide infrared-emitting diode within a PDIP-4 package. Key electrical parameters include a maximum collector-emitter voltage of 70 V, a maximum collector current of 50 mA, and an isolation voltage of 5000 Vrms. The device features a current transfer ratio ranging from 50% to 600%, a forward voltage of 1.6 V at 60 mA forward current, and a power dissipation of 265 mW. Operating temperatures span from -40°C to +100°C.
Verify the specific suffix 'G' corresponds to lead-free compliance requirements when sourcing. Confirm that the PDIP-4 package dimensions match the target PCB footprint constraints. Ensure the operating environment temperature remains within the specified -40°C to +100°C range to maintain performance integrity. Cross-reference the manufacturer part number against authorized distributor catalogs to avoid counterfeit components.
Select this component when a single-channel isolation barrier with moderate speed is required. The wide current transfer ratio range accommodates various drive conditions. Consider the 70 V collector-emitter voltage limit for load compatibility. The PDIP-4 form factor is appropriate for prototyping or low-volume production where surface-mount alternatives are not mandatory.
This device belongs to the TCET1100 series of transistor output optocouplers. It shares functional similarities with other Vishay optoisolators but is distinguished by its specific 4-pin DIP configuration and 5000 Vrms isolation rating. The series is designed for cost-effective isolation solutions in industrial and consumer electronics.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical ratings before considering alternative manufacturers' components.