TCET1101G

Overview

The TCET1101G is a single-channel transistor output optocoupler from Vishay, featuring an infrared-emitting diode optically coupled to an NPN phototransistor in a 4-lead plastic dual inline package. It offers a high current transfer ratio of 40% to 80% at a forward current of 10mA and supports a maximum collector-emitter voltage of 70V. The device provides robust electrical isolation with a rated voltage of 5000Vrms. Typical switching characteristics include a rise time of 3μs and a fall time of 4.7μs, suitable for general-purpose digital signal isolation applications.

Feature Summary

• Integrates a gallium arsenide infrared-emitting diode with an NPN phototransistor for optical signal transmission
• Provides high-voltage electrical isolation between input and output circuits
• Designed for through-hole mounting in standard 4-pin DIP configurations

Applications

• Digital signal isolation in industrial control systems
• Interface circuits for microprocessors and logic devices
• Switching power supply feedback loops

Procurement Notes

Verify the specific Current Transfer Ratio (CTR) bin required for your application, as the TCET1101G typically specifies a range of 40% to 80%. Confirm that the 4-DIP package and 5000Vrms isolation rating meet your safety standards. Ensure the operating temperature range of -40°C to 100°C aligns with your system environment. Check for RoHS compliance status if mandated by your regional regulations.

Selection Notes

Select this component when a single channel of high-isolation voltage is needed for low-speed digital signals. The 40-80% CTR range requires appropriate pull-up resistor calculation to ensure reliable logic levels. Consider the 3μs/4.7μs switching speeds; if faster response is required, other series members may be more suitable. Verify that the 60mA maximum forward current fits your drive circuit capabilities.

Part Context

This part belongs to the TCET1100 series of Vishay optocouplers, which are designed for general-purpose isolation. The series includes variants with different CTR ranges, such as the TCET1102G and TCET1103G, allowing designers to choose based on gain requirements. These components share the same physical footprint and basic electrical characteristics, differing primarily in their phototransistor sensitivity.

Replacement Considerations

Direct substitutes within the same family include TCET1102G and TCET1103G, which offer different CTR ranges but identical packaging and isolation ratings. Cross-brand replacements must match the 4-DIP package, 5000Vrms isolation, and similar switching times.