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The TCET1102 is a high-temperature phototransistor optocoupler manufactured by Vishay Semiconductor Opto Division. It integrates a gallium arsenide infrared-emitting diode with a phototransistor in a 4-lead plastic dual inline package (PDIP). The device provides electrical isolation with a rated voltage of 5000Vrms across one channel. Key electrical parameters include a collector-emitter saturation voltage of 0.3V, a maximum collector current of 50mA, and an output voltage rating of 70V. It operates within a temperature range of -40°C to 100°C and features a power dissipation capacity of 0.265W.
Verify the specific ordering suffix against the official Vishay datasheet to ensure correct packaging and variant selection. Confirm that the procurement source provides authentic components from Vishay Semiconductor Opto Division. Check for compliance with relevant environmental standards such as RoHS requirements before finalizing purchase orders.
Select this component when high-temperature stability and strong isolation voltage are critical design constraints. The through-hole PDIP package suits prototyping and applications where mechanical robustness is preferred over surface-mount density. Ensure the input forward current and output load requirements align with the specified 50mA collector current limit.
This part belongs to the TCET110 series of optocouplers from Vishay, designed for general-purpose isolation tasks. Unlike lower-temperature variants, the TCET1102 is specifically engineered to maintain performance characteristics at elevated temperatures up to 100°C. It serves as a reliable interface solution in scenarios where standard optocouplers might fail due to thermal stress.
Direct substitutes within the same Vishay family may include other TCET110x variants if temperature ratings or pinouts differ. Verify compatibility with existing board layouts and thermal management strategies when considering alternative models from different manufacturers.