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The TCET1106G is a single-channel transistor output optocoupler manufactured by Vishay Semiconductor Opto Division. It features an NPN phototransistor output and utilizes a 4-DIP through-hole package. The device provides an isolation voltage of 5000 Vrms. Key electrical parameters include a collector-emitter saturation voltage of 300 mV maximum, a forward current of 60 mA, and a forward voltage of 1.6 V. The current transfer ratio ranges from 100% to 300%. Operating temperatures span from -40°C to +100°C.
Verify the specific suffix G indicates RoHS compliance and lead-free status as per manufacturer documentation. Confirm the 4-DIP package dimensions match the target PCB footprint. Ensure the current transfer ratio range meets the system's logic level requirements. Check for any specific handling precautions related to the phototransistor output characteristics during assembly.
Select this component when a single channel with moderate speed and high isolation voltage is required. The NPN output suits applications needing open-collector configurations. Consider the 100-300% CTR range for reliable switching across temperature variations. Verify that the 60 mA forward current limit aligns with the driving circuit capabilities.
This part belongs to the TCET1100 series of transistor output optocouplers. The series offers various current transfer ratio grades to accommodate different sensitivity requirements while maintaining consistent electrical characteristics such as isolation voltage and switching times. The G suffix typically denotes environmental compliance.
Compatible substitutes within the same family include TCET1100G, TCET1102G, TCET1104G, TCET1106G, TCET1107, and TCET1108G. These parts share identical pinouts and mechanical dimensions but differ in current transfer ratio specifications. Verify the CTR range of the replacement matches the design constraints.