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The TCET1108 is a single-channel optoisolator manufactured by Vishay Semiconductor Opto Division. It features a gallium arsenide infrared-emitting diode optically coupled to a phototransistor within a 4-lead plastic dual in-line package (DIP). The device provides an isolation voltage of 5000Vrms and supports DC input signals. Key electrical parameters include a maximum collector-emitter voltage of 80V, a typical forward voltage of 1.25V, and a maximum DC forward current of 60mA. The output channel delivers up to 50mA with a saturation voltage of 300mV max. Performance metrics indicate a current transfer ratio ranging from 130% to 260% at 5mA input, with typical turn-on/turn-off times of 6µs/5µs and rise/fall times of 3µs/4.7µs.
Verify the specific suffix code against the manufacturer datasheet to confirm pin configuration and packaging details. Ensure the selected variant matches the required isolation voltage and thermal operating range for the target application environment.
Select this component when a standard DIP form factor is required for through-hole mounting. Consider the specific current transfer ratio requirements and switching speed limitations inherent to the phototransistor output type compared to logic-output alternatives.
This part belongs to the TCET series of optocouplers from Vishay. It is functionally paired with the TCLT1108 phototransistor unit, which shares similar electrical characteristics but utilizes a surface-mount SOP package instead of the through-hole DIP configuration found in the TCET1108.
Public confirmed substitutes are not explicitly listed in the provided source data for this specific part number.