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The TCET1113G is a single-channel transistor output optocoupler manufactured by Vishay Semiconductor Opto Division. It features an NPN phototransistor output and utilizes a 4-DIP through-hole package. The device provides 5000 Vrms insulation voltage for effective circuit isolation. Key electrical parameters include a maximum collector-emitter voltage of 70 V, a maximum collector current of 50 mA, and a forward current rating of 60 mA. The typical rise and fall times are 3 µs and 4.7 µs, respectively. The component operates within a temperature range of -40°C to +110°C.
Verify the specific Current Transfer Ratio (CTR) bin required for the application, as performance varies across different manufacturing lots. Confirm that the 4-DIP package dimensions match the target PCB footprint. Ensure the thermal management strategy supports the 110°C operating limit under worst-case load conditions. Cross-reference the datasheet revision date to ensure compatibility with existing design specifications.
Select this component when a single channel of isolation is sufficient for the design. The NPN output type is appropriate for sinking current in digital logic interfaces. Consider the 5000 Vrms rating for safety compliance in mains-connected equipment. Evaluate the 3 µs rise time against the system's switching speed requirements to ensure adequate signal integrity without excessive delay.
This part belongs to Vishay's TCET series of transistor output optocouplers. These devices are designed for general-purpose isolation tasks where cost-effectiveness and reliability are prioritized. The series offers various CTR ranges to accommodate different drive current requirements while maintaining standard DIP packaging for easy integration into legacy and modern PCB designs.
Direct substitutes may include other Vishay single-channel NPN optocouplers with similar 5000 Vrms ratings and DIP-4 packages, such as the TCET1108G or TCET1106G, provided their CTR ranges align with the design margins. Verify pinout compatibility before substitution.