TDA2614/N1,112

Overview

The TDA2614/N1,112 is a 6 W hi-fi audio power amplifier designed for mains-fed applications like TV and radio. It operates within a supply voltage range of 15 V to 42 V, delivering up to 8.5 W output at 10% THD into an 8 Ω load. The device features a fixed internal voltage gain of 30 dB and includes input mute functionality to suppress switch-on/off clicks. It incorporates short-circuit protection and thermal shutdown circuits that activate above 150 °C.

Feature Summary

• Input mute circuit prevents switch-on and switch-off clicks
• Short-circuit proof and thermally protected design
• Hi-fi performance compliant with IEC 268 and DIN 45500 standards

Applications

• Mains-fed television sets
• Radio receivers
• Audio amplification in consumer electronics

Procurement Notes

Verify the specific ordering suffix N1,112 against the manufacturer's current product specification to ensure package and material code alignment. Confirm availability status as this component may be subject to lifecycle changes or obsolescence notices from NXP Semiconductors.

Selection Notes

Select this amplifier for single-channel applications requiring high efficiency and minimal external components. Ensure adequate heatsinking is provided given the 8 K/W junction-to-case thermal resistance, particularly when operating near maximum voltage limits.

Part Context

This component belongs to the TDA261x series of audio power amplifiers manufactured by NXP Semiconductors (formerly Philips). It serves as a mono amplifier solution, distinct from stereo variants like the TDA2615, targeting cost-sensitive mains-powered audio systems.

Replacement Considerations

TDA2613

FAQ

How is the mute function activated?

The mute circuit activates automatically when the supply voltage drops below 10 V. It can also be manually triggered via pin 2 by applying a current of at least 300 μA.

What are the thermal protection thresholds?

The device features two thermal protection circuits that attack at temperatures exceeding 150 °C, protecting both the crystal average temperature and the momentary temperature of the power transistors.