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The TF252TH-4A-TL-H is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It is designed for surface-mount applications in the 3-VTFP package. The device supports a maximum continuous drain current of 1 mA and a maximum power dissipation of 100 mW. Key electrical characteristics include a gate-source cutoff voltage of 200 mV at 1 µA and a typical zero-bias drain-source current of 140 µA at 5 V. The component operates within a junction temperature range up to 150°C and features a maximum input capacitance of 3.5 pF at 5 V.
Verify availability status as this component may be discontinued. Confirm exact ordering suffixes match the required specifications. Check for authorized distributors offering surplus stock if new production is unavailable. Ensure compliance with RoHS and REACH regulations for the specific manufacturing batch. Validate package markings against official datasheets to prevent counterfeit risks.
Select this component when a small-signal N-channel JFET is required for impedance matching or buffering. The 3-VTFP package is suitable for automated surface-mount assembly processes. Consider the low drain current limit when designing bias networks. Verify that the input capacitance meets the bandwidth requirements of the target application.
This part belongs to the TF202/TF252 series of JFETs from onsemi, commonly used in audio and sensor applications. It shares similar pinouts and electrical profiles with other members of the family, such as the TF202THC-4-TL-H, but may differ in specific parameter tolerances or packaging variants. The series is widely recognized for use in microphone preamp circuits due to its low noise characteristics.
Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-reference with generic N-channel JFETs only after verifying all electrical parameters and pinout compatibility.