TGA2621-SM

RF Amplifiers Overview

The TGA2621-SM is a packaged Ku-band power amplifier fabricated using Qorvo's TQPHT15 0.15 um GaAs pHEMT process. It operates within a frequency range of 16 GHz to 18.5 GHz. The device delivers an output power of 30 dBm (1 Watt) with a typical small-signal gain of 24.5 dB. It is housed in a compact 5x5 mm 32-pin QFN package, designed for high-efficiency RF signal amplification in demanding microwave applications.

RF Amplifiers Feature Summary

• Utilizes advanced 0.15 um GaAs pHEMT technology for reliable performance
• Provides high linear output power suitable for wideband systems
• Integrated thermal pad design for efficient heat dissipation

RF Amplifiers Applications

• Satellite communication uplink and downlink stages
• Point-to-point microwave radio links
• Electronic warfare and radar subsystems

RF Amplifiers Procurement Notes

Verify the specific datasheet revision and RoHS compliance status before integration. Confirm that the 32-QFN footprint matches your PCB layout requirements. Ensure thermal management solutions are adequate for the specified power dissipation levels during continuous operation.

RF Amplifiers Selection Notes

Select this component when a Ku-band solution is required with moderate gain and high output power. Consider the GaAs technology benefits over silicon alternatives for linearity. Evaluate the package size constraints against available board space and thermal vias.

RF Amplifiers Part Context

This part belongs to Qorvo's portfolio of packaged RF power amplifiers. It complements other Ku-band devices by offering a balance between output power and gain. The TQPHT15 process ensures consistency across production batches for critical defense and commercial satellite markets.

RF Amplifiers Replacement Considerations

Check for direct pin-compatible substitutes within the same family. Verify if alternative packages offer similar electrical characteristics without requiring schematic changes.