TGA2975-SM

$100.40

Description：2.7-3.5 GHZ, 12 W GAN PA
Series：-
Mfr：Qorvo
Package：Tray

SKU:d40b1042d233 Category: RF Amplifiers Brand: Qorvo

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Product introduction

TGA2975-SM is listed in the RF Amplifiers range at ChipApex. The manufacturer field lists Qorvo. Its product description is 2.7-3.5 GHZ, 12 W GAN PA. Review the specifications below when checking this part for your BOM.

RF Amplifiers specifications for TGA2975-SM

Description：2.7-3.5 GHZ, 12 W GAN PA
Series：-
Mfr：Qorvo
Package：Tray
Frequency：2.7GHz ~ 3.5GHz
P1dB：-
Gain：31dB
Noise Figure：-
RF Type：Radar
Voltage - Supply：28V
Current - Supply：175mA
Test Frequency：2.7GHz ~ 3.5GHz
Mounting Type：Surface Mount
Package / Case：24-VQFN Exposed Pad
Supplier Device Package：24-QFN (5x5)
Grade：-
Qualification：-

RF Amplifiers datasheet and documents for TGA2975-SM

TGA2975-SM

RF Amplifiers Overview

The TGA2975-SM is a packaged MMIC power amplifier operating from 2.7 to 3.5 GHz, designed using Qorvo's TQGaN25 0.25-μm GaN on SiC technology. It typically provides more than 41 dBm of saturated output power and delivers 12 W of continuous wave output power. The device features a gain of 31 dB and a Power Added Efficiency (PAE) greater than 52%. It is housed in a 24-QFN (5x5) package.

RF Amplifiers Feature Summary

Utilizes 0.25-μm GaN on SiC technology for high performance
Provides high saturated output power exceeding 41 dBm
Delivers 12 W continuous wave output power
Achieves Power Added Efficiency greater than 52%

RF Amplifiers Applications

Radar systems
Electronic warfare applications
Communications infrastructure

RF Amplifiers Procurement Notes

Verify the specific part number suffix against official Qorvo documentation to ensure correct packaging and testing configurations. Confirm that the 24-QFN (5x5) package dimensions align with your PCB layout requirements. Check for any specific handling instructions related to the GaN on SiC process. Ensure compatibility with the intended biasing conditions for the 2.7 to 3.5 GHz frequency range.

RF Amplifiers Selection Notes

Select this component when high output power and efficiency are critical within the S-band or C-band frequencies. The GaN on SiC technology offers robustness suitable for demanding environments. Consider the thermal management capabilities required for the 12 W output power level. Evaluate the need for the specific 31 dB gain provided by this MMIC design.

RF Amplifiers Part Context

This part belongs to Qorvo's portfolio of packaged MMIC power amplifiers utilizing advanced GaN on SiC processes. It is distinct from other models like the TGA2963 which operates at higher frequencies (6-18 GHz). The TGA2975-SM is specifically optimized for lower frequency bands compared to its widerband counterparts.