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TGA2976-SM is listed in the RF Amplifiers range at ChipApex. The manufacturer field lists Qorvo. Its product description is 0.1-3.0 GHZ, 10 W GAN PA. Review the specifications below when checking this part for your BOM.
The TGA2976-SM is a wideband cascode power amplifier fabricated on Qorvo’s 0.25um GaN-on-SiC process. It operates from 100 MHz to 3 GHz, delivering 10 W (40 dBm) saturated output power with greater than 20 dB small-signal gain and over 22% power-added efficiency at 27 dBm input. The device supports 40-50V drain bias operation and features integrated DC blocking capacitors and RF chokes for simplified matching.
Verify current availability status as the component may be discontinued or subject to supply constraints. Confirm exact electrical specifications against the latest official datasheet prior to design integration. Ensure proper handling procedures for GaN devices are followed during assembly and testing.
Select this component for designs requiring high power density across a broad frequency range up to 3 GHz. The integrated matching elements reduce external component count. Verify thermal management requirements due to high power dissipation in the specified operating conditions.
This part belongs to Qorvo's TGA series of GaN power amplifiers. It is designed for high-performance RF applications where wide bandwidth and high efficiency are critical. The use of GaN-on-SiC provides superior thermal conductivity and breakdown voltage compared to traditional semiconductor materials.
Check for direct pin-compatible substitutes within the TGA series. Evaluate alternative GaN amplifiers from other manufacturers if specific form factors differ. Ensure replacement parts meet the same voltage and frequency requirements.
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