TGS2353-2-SM

$146.91

Description：0.5-18 GHZ 10W GAN SPDT REF SWIT
Series：-
Mfr：Qorvo
Package：Tray

SKU:42fa1bc7233b Category: RF Switches Brand: Qorvo

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Product introduction

TGS2353-2-SM is listed in the RF Switches range at ChipApex. The manufacturer field lists Qorvo. Its product description is 0.5-18 GHZ 10W GAN SPDT REF SWIT. Review the specifications below when checking this part for your BOM.

RF Switches specifications for TGS2353-2-SM

Description：0.5-18 GHZ 10W GAN SPDT REF SWIT
Series：-
Mfr：Qorvo
Package：Tray
Product Status：Active
RF Type：Radar
Topology：Reflective
Circuit：SPDT
Frequency Range：500MHz ~ 18GHz
Isolation：30dB
Insertion Loss：1.5dB
Test Frequency：-
Impedance：50Ohm
Voltage - Supply：-
Operating Temperature：-40°C ~ 85°C
Mounting Type：Surface Mount
Package / Case：22-PowerFQFN
P1dB：-
IIP3：-
Features：-
Supplier Device Package：22-QFN (4x4)
Grade：-
Qualification：-

RF Switches datasheet and documents for TGS2353-2-SM

TGS2353-2-SM

RF Switches Overview

The Qorvo TGS2353-2-SM is a single-pole, double-throw (SPDT) reflective RF switch IC designed for high-power applications. It operates across a frequency range of 0.5 to 18 GHz and utilizes Qorvo's 0.25um GaN on SiC process technology. The device features an insertion loss of less than 1.5 dB and typical off-isolation of 30 dB. It supports up to 10W output power and functions within a temperature range of -40°C to +85°C. The component is housed in a compact 4x4mm ceramic air-cavity QFN-22 package.

RF Switches Feature Summary

Fabricated using 0.25um GaN on SiC technology for high performance
Operates as a single-pole, double-throw reflective switch
Designed for wideband operation from 0.5 to 18 GHz
Housed in a 4x4mm ceramic air-cavity QFN package

RF Switches Applications

Phased array radar systems
Electronic warfare equipment
High-frequency communication infrastructure

RF Switches Procurement Notes

Verify the specific suffix 'SM' corresponds to the 4x4mm ceramic air-cavity QFN-22 package configuration when sourcing. Confirm that the required GaN on SiC process specifications align with system power and thermal requirements. Ensure compatibility with the 0.5 to 18 GHz operational bandwidth before finalizing procurement orders.

RF Switches Selection Notes

Select this component for designs requiring wideband SPDT switching capabilities up to 18 GHz. The GaN on SiC fabrication ensures robustness for high-power handling scenarios. Consider the ceramic air-cavity QFN package for optimal thermal management and signal integrity in dense PCB layouts compared to standard plastic packages.

RF Switches Part Context

This part belongs to the TGS2353 series of RF switches from Qorvo. It represents a specialized variant optimized for high-frequency radar and electronic warfare applications. The series leverages advanced GaN technology to deliver superior linearity and power handling compared to traditional silicon-based solutions.