SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Qorvo TGS2355-SM is a high-power Single-Pole Double-Throw (SPDT) reflective RF switch designed for demanding applications. It operates within a frequency range of 0.5 GHz to 6.0 GHz and utilizes Qorvo's QGaN25 0.25um GaN on SiC production process. The device typically supports up to 40 W input power handling at control voltages of 0/-40 V. It maintains low insertion loss of 0.8 dB or less, with typical off-isolation of 40 dB. The component is rated for a maximum operating temperature of +150 °C.
Verify the specific suffix against official Qorvo documentation to confirm package type and tape-and-reel specifications. Ensure control voltage requirements align with system design constraints. Confirm thermal management strategies are adequate for the specified operating temperature range. Cross-reference part numbers carefully as minor suffix variations may indicate different packaging or testing criteria.
Select this component when high linearity and power handling are critical within the 0.5 to 6.0 GHz spectrum. The GaN on SiC technology offers superior performance compared to traditional silicon-based switches. Consider the reflective nature of the switch when designing matching networks. Evaluate the 0.8 dB insertion loss impact on overall system gain and noise figure requirements.
The TGS2355-SM belongs to Qorvo's high-power RF switch portfolio, leveraging advanced GaN-on-SiC technology. It is engineered for robust performance in harsh environments. The device complements other SPDT switches in the series, offering distinct advantages in power handling and frequency coverage. It serves as a key enabling component for next-generation defense and aerospace radio frequency front ends.
Public confirmed substitute part numbers: None identified.