TGS2355-SMTR7

Description：0.5-6 GHZ, 100 W, HIGH PWR GAN S
Series：-
Mfr：Qorvo
Package：Tape & Reel (TR)

SKU:0222708b2f57 Category: RF Switches Brand: Qorvo

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Product introduction

Product Detailed Parameters

Description：0.5-6 GHZ, 100 W, HIGH PWR GAN S
Series：-
Mfr：Qorvo
Package：Tape & Reel (TR)
Product Status：Active
RF Type：-
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TGS2355-SMTR7

Overview

The TGS2355-SMTR7 is a single-pole, double-throw (SPDT) reflective RF switch IC fabricated on Qorvo's 0.25um GaN-on-SiC process. It operates within the 0.5 to 6 GHz frequency range and supports up to 100 W of input power. The device features an insertion loss of 1.1 dB and typical off-isolation of 40 dB. It utilizes a QFN-32 package with SMD/SMT mounting style. Operating temperatures range from -40°C to +85°C. Key electrical parameters include a high control voltage of -48 V, work supply current of 1 mA, and power dissipation of 35 W.

Feature Summary

Fabricated using 0.25um GaN-on-SiC technology for high-power handling
Reflective SPDT configuration supporting wideband operation
Capable of delivering up to 100 W input power
Low insertion loss and high isolation characteristics

Applications

Base station transmit/receive modules
Point-to-point microwave radio systems
Electronic warfare applications
Test and measurement equipment

Procurement Notes

Verify the specific suffix SMTR7 indicates tape-and-reel packaging versus tray options. Confirm RoHS compliance status through official documentation. Ensure ESD protection protocols are followed during handling due to moisture sensitivity classification. Validate that the -48 V control requirement aligns with system biasing capabilities before integration.

Selection Notes

Select this component when high linearity and power handling are critical in the 0.5-6 GHz band. Compare against other GaN switches regarding thermal management requirements given the 35 W dissipation rating. Evaluate the QFN-32 footprint compatibility with existing PCB layouts. Consider the reflective nature of the switch for impedance matching network design.

Part Context

Part of the TGS series focusing on high-power RF switching solutions. Utilizes Qorvo's proprietary GaN-on-SiC platform to achieve superior performance compared to silicon-based alternatives. Designed for demanding wireless infrastructure environments requiring reliability and efficiency.