TGS2355

$105.98

Description：0.5-6 GHZ,100 W,HIGH PWR GAN SPD
Series：-
Mfr：Qorvo
Package：Tray

SKU:d6b13a4414d9 Category: RF Switches Brand: Qorvo

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Product introduction

Product Detailed Parameters

Description：0.5-6 GHZ,100 W,HIGH PWR GAN SPD
Series：-
Mfr：Qorvo
Package：Tray
Product Status：Active
RF Type：Radar
Topology：Reflective
Circuit：SPDT
Frequency Range：500MHz ~ 6GHz
Isolation：40dB
Insertion Loss：1.3dB
Test Frequency：-
Impedance：50Ohm
Voltage - Supply：-
Operating Temperature：-40°C ~ 85°C
Mounting Type：Surface Mount
Package / Case：Die
P1dB：-
IIP3：-
Features：-
Supplier Device Package：Die
Grade：-
Qualification：-

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TGS2355

Overview

The Qorvo TGS2355 is a single-pole, double-throw (SPDT) reflective RF switch fabricated on a 0.25µm GaN-on-SiC process. It operates from 0.5 GHz to 6.0 GHz and supports up to 100 W input power handling. The device delivers less than 1 dB insertion loss across most of the operating band and provides greater than 40 dB isolation. Designed for high-power applications, it functions within a temperature range of -55°C to +150°C.

Feature Summary

Reflective SPDT architecture utilizing 0.25µm GaN-on-SiC technology
High power handling capability up to 100 W input
Low insertion loss below 1 dB over the operational frequency range
Wideband operation spanning 0.5 GHz to 6.0 GHz

Applications

High-power radar systems
Electronic warfare equipment
Military communication transceivers

Procurement Notes

Verify the specific suffix designation when ordering, as the bare die TGS2355 differs from the packaged TGS2355-SM variant. Confirm control voltage requirements, noting that the SM version typically requires 0/-40 V levels. Ensure compatibility with your PCB footprint if selecting the surface-mount package. Review the official datasheet for precise thermal management guidelines given the wide operating temperature range.

Selection Notes

Select this component for designs requiring robust high-power switching in the VHF/UHF bands. The GaN-on-SiC construction offers superior thermal performance compared to silicon alternatives. Consider the TGS2355-SM if a discrete package is preferred over the bare die option. Evaluate system isolation needs against the typical 40 dB specification to ensure signal integrity in complex RF front-ends.

Part Context

This part belongs to Qorvo's high-power GaN switch portfolio, designed for demanding defense and aerospace environments. It complements other devices like the TGS2353-2, which extends frequency coverage to 18 GHz. The TGS2355 specifically targets applications where moderate bandwidth meets high power density requirements.