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The Bourns TIC201M-S is a silicon triac from the TIC201 series, featuring a glass-passivated wafer and TO-220 package. It offers a repetitive peak off-state voltage (VDRM) of 600 V and a full-cycle RMS on-state current (IT(RMS)) of 2.5 A at case temperatures at or below 85°C. The device supports a peak on-state surge current (ITSM) of 12 A. Key electrical characteristics include a maximum gate trigger current (IGT) of 5 mA in Quadrant I operation and a typical gate trigger voltage (VGT) ranging from -2.5 V to +2.5 V depending on supply polarity. The component operates within an operating case temperature range of -40°C to +110°C.
Verify the specific suffix M against the manufacturer's official documentation to confirm the 600 V rating. Ensure that thermal management designs account for the linear derating rate of 100 mA/°C above 85°C case temperature. Confirm that the TO-220 package mounting base is electrically connected to Pin 2 (Gate) during installation to prevent isolation issues.
Select this component when a 600 V blocking voltage is required alongside a 2.5 A continuous current capacity. The sensitive gate characteristic allows for direct interfacing with low-power logic drivers without additional amplification stages. Consider the thermal resistance values for heat sink sizing if operating near the maximum current limits.
The TIC201M-S belongs to the TIC201 series of silicon triacs manufactured by Bourns Inc. This series includes variants with different voltage ratings, specifically the TIC201D (400 V), TIC201M (600 V), and TIC201S (700 V). All variants share the same physical package and general electrical profile, differing primarily in their off-state voltage capabilities.
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-referencing should be performed using matching parameters: 600 V VDRM, 2.5 A IT(RMS), TO-220 package, and sensitive gate specifications.