SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Bourns TIC216M-S is a silicon triac from the TIC216 series, featuring a glass-passivated wafer and TO-220 package. It offers a repetitive peak off-state voltage (VDRM) of 600 V and supports a full-cycle RMS on-state current (IT(RMS)) of 6 A at case temperatures up to 70°C. The device has a peak on-state surge current (ITSM) rating of 60 A and a maximum gate trigger current (IGT) of 5 mA across quadrants 1 through 3. Electrical characteristics include an on-state voltage (VT) of ±1.7 V at IT = ±8.4 A and a holding current (IH) of ±30 mA. Thermal resistance from junction to case (RθJC) is 2.5 °C/W, with an operating case temperature range of -40°C to +110°C.
Verify the specific suffix 'S' corresponds to the 700 V variant if cross-referencing with other datasheets, as the provided source explicitly defines TIC216M as 600 V. Confirm package type is TO-220. Check for obsolete status notifications from the manufacturer or distributors before finalizing procurement plans.
Select this component when a 600 V blocking voltage and 6 A continuous current capacity are required in a TO-220 form factor. Ensure the application operates within the specified -40°C to +110°C case temperature range. Consider thermal derating above 70°C, which reduces current handling by 150 mA/°C.
The TIC216M-S belongs to the broader TIC216 series of sensitive gate silicon triacs manufactured by Bourns Inc. This series includes variants with different off-state voltage ratings, specifically 400 V (D), 600 V (M), 700 V (S), and 800 V (N). All share common electrical parameters such as the 6 A RMS current rating and similar thermal characteristics.
Direct substitutes must match the 600 V VDRM, 6 A IT(RMS), and TO-220 package. Verify that replacement devices maintain compatible gate trigger currents and thermal resistance values to ensure circuit performance parity.
The maximum gate trigger current (IGT) is 5 mA for Quadrants 1 through 3.
Above 70°C case temperature, the RMS on-state current must be linearly derated at a rate of 150 mA per degree Celsius up to 110°C.
The critical rate of rise of off-state voltage is typically ±20 V/µs at a case temperature of 110°C.