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The TIC225D-S is a silicon triac from the TIC225 series manufactured by Bourns Inc. It features an 8 A RMS on-state current and a peak surge current of 70 A. The device offers a repetitive peak off-state voltage (VDRM) of 400 V, classifying it within the 400 V to 800 V range of the series. It utilizes a sensitive gate design with a maximum gate trigger current (IGT) of 5 mA in Quadrant I operation. Packaged in a TO-220 form factor, the component supports an operating case temperature range from -40°C to +110°C and includes glass passivation for wafer protection.
Verify component authenticity through authorized distribution channels. Confirm that the specific ordering suffix matches the required voltage rating and package configuration. Ensure storage conditions remain within specified limits to maintain junction integrity prior to assembly.
Select this component when a 400 V blocking voltage is sufficient for the application. Evaluate thermal management requirements against the specified junction-to-case resistance. Verify that the load characteristics align with the 8 A RMS continuous current limit and derating curves provided in the datasheet.
This part belongs to the TIC225 series, which encompasses multiple voltage variants including 600 V, 700 V, and 800 V options. The TIC225D specifically denotes the 400 V off-state voltage variant within this family of sensitive gate silicon triacs designed for general-purpose AC control.
Cross-reference with other manufacturers offering 400 V, 8 A sensitive gate triacs in TO-220 packages. Verify pinout compatibility and thermal resistance specifications before substitution.
The maximum gate trigger current (IGT) is 5 mA in Quadrant I operation.
The datasheet does not explicitly mandate a snubber circuit but specifies critical commutation voltage limits that must be respected during operation.
The junction-to-case thermal resistance (RθJC) is typically 2.5 °C/W.