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The TIC236M-S is a silicon triac from the TIC236 series manufactured by Bourns. It features a glass-passivated wafer and operates with a full-cycle RMS on-state current of 12 A at case temperatures up to 70°C. The device has a repetitive peak off-state voltage (VDRM) of 600 V. Peak on-state surge current reaches 100 A under specified conditions. Gate trigger current (IGT) maximum is 50 mA for quadrants 1 through 3. Operating case temperature range spans -40°C to +110°C, while storage temperature extends to +125°C. Junction-to-case thermal resistance is 2°C/W.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status via official documentation. Check for obsolescence notices as the series may be restricted for new designs. Ensure proper handling procedures for TO-220 packages during assembly.
Select based on required off-state voltage blocking capability and thermal management needs. Verify gate trigger characteristics match driver circuit output. Consider derating requirements for ambient temperatures exceeding 70°C case limits. Evaluate surge current tolerance against load inrush specifications.
The TIC236M-S belongs to the TIC236 series of high-current silicon triacs. This family includes variants with different voltage ratings such as TIC236D (400 V), TIC236S (700 V), and TIC236N (800 V). All share identical current ratings and package configurations within the same product line.
Direct substitutes include other TIC236 series variants like TIC236D, TIC236S, or TIC236N if voltage ratings align with application requirements. Cross-reference electrical parameters carefully before substitution.