SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Bourns TIC236N-S is a silicon TRIAC from the TIC236 series, rated for 12 A RMS on-state current and an 800 V repetitive peak off-state voltage (VDRM). It utilizes a glass-passivated wafer and is housed in a TO-220 package. The device supports a peak on-state surge current of 100 A and features a maximum gate trigger current (IGT) of 50 mA across quadrants 1 through 3. Electrical characteristics include an on-state voltage of 2.1 V at ±17 A and a holding current of 40 mA. Thermal resistance from junction to case is 2 °C/W, with an operating case temperature range spanning -40 °C to +110 °C.
Verify component authenticity by cross-referencing the manufacturer's part number and datasheet revision date against official Bourns documentation. Confirm that the specific suffix corresponds to the required voltage rating and packaging configuration before procurement. Ensure compliance with RoHS directives if applicable to the target assembly process.
Select this component based on the 800 V blocking voltage requirement and 12 A continuous current load. Evaluate thermal management needs given the 2 °C/W junction-to-case resistance. Consider the 50 mA maximum gate trigger current when designing the drive circuitry to ensure reliable turn-on across all quadrants within the specified temperature range.
This device belongs to the TIC236 series of high-current silicon TRIACs manufactured by Bourns. The series offers various voltage ratings including 400 V, 600 V, 700 V, and 800 V options. The TIC236N-S specifically denotes the 800 V variant within this family of glass-passivated devices designed for robust industrial applications.
Check for direct pin-compatible substitutes with matching 12 A RMS and 800 V ratings. Verify equivalent gate trigger characteristics and thermal resistance values to ensure circuit compatibility without redesign.