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The Bourns TIC246D-S is a silicon TRIAC from the TIC246 series, rated for 16 A RMS on-state current and a repetitive peak off-state voltage of 400 V. It features a glass-passivated wafer construction and operates within a case temperature range of -40°C to +110°C. The device supports a peak on-state surge current of 125 A and has a maximum gate trigger current of 50 mA across quadrants 1-3. Packaged in a TO-220 format with pin 2 electrically connected to the mounting base, it offers a junction-to-case thermal resistance of 1.9 °C/W.
Verify component authenticity by cross-referencing the manufacturer marking against official datasheet specifications. Confirm the specific voltage rating suffix corresponds to the required circuit parameters. Ensure proper thermal management design accounts for the specified junction-to-case thermal resistance values during operation.
Select this component based on the 400 V off-state voltage requirement and 16 A continuous current capacity. Evaluate thermal constraints to ensure the operating case temperature remains within the -40°C to +110°C range. Consider the TO-220 package dimensions for PCB layout and heat sinking requirements.
The TIC246D-S belongs to the TIC246 series of high-current silicon TRIACs manufactured by Bourns. This series includes variants with different voltage ratings, such as the TIC246M (600 V), TIC246S (700 V), and TIC246N (800 V). All variants share identical current ratings and physical packaging characteristics.
Consult official substitution guides for equivalent TRIACs with matching 16 A current and 400 V voltage ratings. Verify pinout compatibility and thermal resistance specifications before implementation.
Pin 2, which corresponds to Main Terminal 2 (MT2), is in direct electrical contact with the mounting base.
The maximum gate trigger current (IGT) is 50 mA for operation in quadrants 1 through 3.
The device has a junction-to-case thermal resistance (RθJC) of 1.9 °C/W and a junction-to-free air thermal resistance (RθJA) of 62.5 °C/W.