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The Bourns TIC253M-S is a silicon triac belonging to the TIC253 series, designed for high-current applications. It features a glass-passivated wafer and operates within an operating case temperature range of -40°C to +110°C. The device provides a repetitive peak off-state voltage (VDRM) of 600 V and handles a full-cycle RMS on-state current (IT(RMS)) of 20 A at or below 70°C case temperature. It supports a peak on-state surge current (ITSM) of 150 A under specified conditions. The maximum gate trigger current (IGT) is rated at 50 mA across quadrants 1 through 3. The component utilizes a SOT-93 package.
Verify component authenticity by checking markings against the official datasheet specifications. Confirm the part number suffix matches the required voltage rating. Ensure storage and handling procedures comply with electrostatic discharge precautions. Review thermal management requirements for the specific application environment before integration.
Select the TIC253M-S when a 600 V off-state voltage is required alongside a 20 A continuous current rating. Consider the SOT-93 package constraints for PCB layout and mounting. Evaluate thermal resistance values to ensure adequate heat dissipation. Compare gate trigger characteristics with the driving circuit capabilities to ensure reliable triggering.
The TIC253M-S is part of the broader TIC253 series of silicon triacs from Bourns Inc. This series includes variants with different voltage ratings, such as the TIC253D (400 V), TIC253N (800 V), and TIC253S (700 V). All members share similar current handling and package characteristics, differing primarily in their blocking voltage capabilities.
Direct replacements must match the 600 V VDRM, 20 A IT(RMS), and SOT-93 package. Verify that alternative components meet the same IGT and dv/dt specifications. Ensure thermal performance remains comparable to maintain system reliability.