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The Bourns TIC263M-S is a silicon TRIAC from the TIC263 series, rated for 600 V repetitive peak off-state voltage and 25 A RMS on-state current. It features a glass-passivated wafer and operates within an ambient temperature range of -40°C to +110°C. The device supports a peak surge current of 175 A and has a maximum gate trigger current of 50 mA across quadrants 1 through 3. Packaged in SOT-93 (TO-220AB), it offers a junction-to-case thermal resistance of 1.52 °C/W.
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm package type matches SOT-93 requirements. Ensure storage conditions remain within specified limits to maintain performance integrity before installation.
Select this component when a 600 V blocking voltage and 25 A continuous current are required. Evaluate thermal management needs based on the 1.52 °C/W junction-to-case resistance. Consider the 50 mA maximum gate trigger current for driver circuit compatibility.
This part belongs to the TIC263 series of high-current silicon TRIACs manufactured by Bourns. The series includes variants with different voltage ratings such as 400 V, 700 V, and 800 V options, all sharing similar current handling and packaging characteristics.
Check for direct equivalents in the TIC263 family or other manufacturers offering 600 V, 25 A TRIACs in TO-220 packages. Verify pinout compatibility and thermal resistance values before substitution.
The maximum gate trigger current is 50 mA across quadrants 1 through 3.
It has a junction-to-case thermal resistance of 1.52 °C/W and requires derating above 60°C case temperature at a rate of 500 mA/°C.
The device can withstand a peak on-state surge current of 175 A for one full sine wave cycle.