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The Bourns TIC263N-S is a silicon TRIAC from the TIC263 series, housed in an SOT-93 package. It features a glass-passivated wafer and supports a repetitive peak off-state voltage (VDRM) of 800 V. The device handles a full-cycle RMS on-state current (IT(RMS)) of 25 A at case temperatures up to 60°C, with a peak on-state surge current (ITSM) of 175 A. Maximum gate trigger current (IGT) is 50 mA across quadrants 1 through 3. Operating case temperature ranges from -40°C to +110°C, with storage limits between -40°C and +125°C.
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm package type matches SOT-93 requirements. Ensure thermal management design accounts for junction-to-case resistance. Validate operating conditions remain within specified electrical limits during procurement planning.
Select this component when high current capacity and robust voltage ratings are required in a compact surface-mount form factor. Consider the SOT-93 package constraints for PCB layout. Evaluate thermal dissipation needs based on the specified junction-to-case resistance. Ensure gate drive circuitry can supply the maximum required trigger current.
This part belongs to the Bourns TIC263 series of silicon TRIACs. The series includes variants with different voltage ratings, such as 400 V, 600 V, and 700 V options. All members share similar current handling characteristics and utilize glass-passivated wafers for reliability in industrial applications.
Check for direct equivalents with identical SOT-93 pinouts and matching 800 V rating. Verify that substitute components meet the same 25 A RMS current requirement and thermal performance standards.