TIP147TU

Single Bipolar Transistors Overview

The TIP147TU is a PNP power Darlington transistor manufactured by onsemi in the TO-3P (CASE 340D-02) through-hole package. It features a monolithic construction with an integrated base-emitter shunt resistor and a built-in collector-emitter diode. The device supports a maximum continuous collector current of 10 A and a peak current of 15 A. It offers a minimum DC current gain (hFE) of 1000 at IC = 5 A and VCE = 4 V, or 500 at IC = 10 A. The collector-emitter sustaining voltage is 100 Vdc, and total device dissipation reaches 125 W at TC = 25°C.

Single Bipolar Transistors Feature Summary

• Monolithic Darlington configuration with high DC current gain
• Integrated base-emitter shunt resistor for improved stability
• Built-in collector-emitter diode for inductive load protection

Single Bipolar Transistors Applications

• General-purpose amplifier circuits
• Low frequency switching applications
• Power linear regulation systems

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix TU against the manufacturer's official documentation to confirm the exact package variant and compliance status. Confirm that the component matches the CASE 340D-02 physical dimensions and pinout configuration required for your printed circuit board layout. Ensure thermal management solutions are adequate for the specified power dissipation ratings under your operating conditions.

Single Bipolar Transistors Selection Notes

Select this component when high current handling capability and elevated DC current gain are required for PNP polarity applications. The integrated shunt resistor simplifies biasing networks compared to discrete Darlington pairs. Consider the thermal resistance characteristics and safe operating area limits when designing for high-power linear or switching modes to ensure reliable junction temperature performance.

Single Bipolar Transistors Part Context

This part belongs to the TIP14x complementary silicon power transistor series designed for robust general-purpose use. The series includes NPN counterparts such as the TIP142. These transistors utilize planar technology to deliver high performance in power amplification and switching tasks where standard transistors may lack sufficient gain or current capacity.

Single Bipolar Transistors Replacement Considerations

TIP142 (NPN counterpart)

Single Bipolar Transistors FAQ

What is the purpose of the internal base-emitter shunt resistor?

The integrated shunt resistor improves stability and ensures the transistor turns off reliably by providing a discharge path for the base charge.

How does the TIP147 handle inductive loads?

It includes a built-in collector-emitter diode that protects the device from voltage spikes generated by inductive loads during switching transitions.

What is the minimum DC current gain specification?

The minimum hFE is 1000 when the collector current is 5 A and VCE is 4 V, dropping to a minimum of 500 at 10 A collector current.