TIP29C

Single Bipolar Transistors Overview

The TIP29C is an NPN silicon power transistor manufactured using Planar technology with a Base Island layout. It operates in a TO-220 package with through-hole mounting. Key electrical ratings include a collector-emitter voltage of 100 V, a collector-base voltage of 100 V, and a continuous collector current of 1 A. The device dissipates up to 30 W at a case temperature of 25°C. Electrical characteristics specify a DC current gain (hFE) ranging from 15 to 75 at IC=1A, a collector-emitter saturation voltage of 0.7 V at IC=1A/IB=125mA, and a maximum operating junction temperature of 150°C.

Single Bipolar Transistors Feature Summary

• Manufactured using Planar technology with a Base Island layout for high gain performance
• Features very low collector-emitter saturation voltage
• Designed for audio, linear, and switching applications

Single Bipolar Transistors Applications

• Audio circuits
• Linear regulation
• Switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific part number against official STMicroelectronics documentation to confirm technical specifications and compliance status. Ensure the procurement channel provides authentic components with valid traceability. Check for RoHS compliance markings on the packaging. Confirm that the ordering suffix matches the required package type and lead-free standards defined in the datasheet.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring an NPN power transistor with a 100V collector-emitter voltage rating and 1A continuous current capability. Consider the TO-220 package for thermal management needs, utilizing heatsinking if operating near the 30W dissipation limit. Evaluate the hFE range of 15 to 75 for base drive requirements in switching or amplification stages.

Single Bipolar Transistors Part Context

The TIP29C belongs to the complementary series of silicon power transistors produced by STMicroelectronics. It serves as the NPN counterpart to the PNP TIP30C. Both devices share similar manufacturing technologies and are intended for general-purpose power switching and amplification tasks within electronic systems.

Single Bipolar Transistors Replacement Considerations

The PNP complement is the TIP30C. Other NPN power transistors with matching 100V, 1A ratings and TO-220 packages may serve as functional substitutes if pinouts and electrical parameters align.