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TL081ID is listed in the Instrumentation, Op Amps, Buffer Amps range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is IC OPAMP JFET 1 CIRCUIT 8SOIC. Review the specifications below when checking this part for your BOM.
The TL081ID is a high-speed JFET input single operational amplifier manufactured by STMicroelectronics. It integrates well-matched high-voltage JFET and bipolar transistors within a monolithic integrated circuit structure. Key electrical characteristics include a typical high slew rate of 16 V/µs, low input bias current, low offset current, and low offset voltage temperature coefficient. The device features internal frequency compensation and offers wide common-mode and differential voltage ranges.
Verify the specific package type and tape-and-reel specifications against the official datasheet before ordering. Confirm that the TL081ID suffix aligns with the required industrial or commercial temperature range. Ensure compatibility with existing PCB footprints and soldering profiles. Cross-reference the manufacturer's latest documentation for any pinout revisions or environmental compliance updates prior to final procurement.
Select this component when high input impedance and low noise are critical requirements for the application. The JFET input stage makes it suitable for high-impedance sensor interfaces. Consider the 16 V/µs slew rate for bandwidth limitations in AC coupling applications. Verify that the supply voltage range meets the system's power constraints and that the DIP-8 package fits the mechanical design.
This part belongs to the TL08x family of general-purpose JFET input operational amplifiers. The 'I' suffix typically denotes an industrial temperature range variant, while 'D' indicates a DIP-8 package. This series is widely used in analog signal processing where low input current and moderate speed are balanced requirements.
Compatible substitutes include the TL081CP from Texas Instruments and the NJM2043 from New Japan Radio. Verify pin compatibility and electrical parameter equivalence before substitution.
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