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The TLP127(MBSSM2-TL,F is a mini flat coupler from Toshiba Semiconductor and Storage, designed for surface mount assembly. It integrates a gallium arsenide infrared emitting diode with a Darlington phototransistor featuring an integrated base-emitter resistor. The device offers a collector-emitter voltage of 300V and an isolation voltage of 2500 Vrms. Key electrical parameters include a forward voltage of 1.15V, output current of 150mA, and rise/fall times of 40us/15us at 10mA drive. It operates within a temperature range of -55°C to +100°C.
Verify the specific suffix MBSSM2-TL against official Toshiba documentation to confirm tape-and-reel packaging and lead-free compliance. Ensure the component matches the 6-MFSOP package dimensions. Cross-reference the manufacturer part number with authorized distributors to avoid counterfeit units. Confirm RoHS status directly from the latest datasheet revision before procurement.
Select this component when high current transfer ratio is required due to the Darlington output structure. The integrated base-emitter resistor simplifies circuit design by reducing external component count. Consider the 300V load voltage capability for medium-voltage switching applications. Verify that the SOP-4-2.54mm footprint fits the target PCB layout constraints.
This part belongs to Toshiba's mini flat coupler series, optimized for space-constrained surface mount designs. The TLP127 family typically combines GaAs LEDs with silicon phototransistors. The MBSSM2-TL suffix indicates specific packaging and environmental compliance attributes defined by the manufacturer for industrial-grade reliability.
Publicly confirmed substitute part numbers are not available in the provided source material. Generic equivalents may exist but require independent verification of pinout, isolation voltage, and CTR specifications against the original Toshiba datasheet.
The response time is typically less than 1 ns, with specific rise and fall times of 40us and 15us respectively under standard test conditions.
Yes, the phototransistor includes an integrated base-emitter resistor to enhance stability and simplify driving circuit requirements.