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The TLP137(BV-TPL,F) is a mini flat coupler consisting of a gallium arsenide infrared emitting diode optically coupled to a photo transistor. It provides high current transfer ratio at low input currents and is suitable for surface mount assembly. Key specifications include a collector-emitter voltage of 80 V (min), a current transfer ratio of 100% (min) with a BV rank of 200% (min), and an isolation voltage of 3750 Vrms (min).
Verify the specific suffix BV-TPL,F against official Toshiba Semiconductor and Storage documentation to confirm the exact binning and packaging configuration. Ensure compliance with RoHS directives and check for UL recognition file E67349 and CSA approval details in the latest datasheet before finalizing procurement.
Select this component when high CTR at low drive currents is required in a compact surface-mount package. The BV rank indicates a higher gain bin, suitable for applications demanding reliable switching with minimal input power. Consider the 3750 Vrms isolation rating for safety-critical interfaces.
This part belongs to the TLP137 series of mini flat couplers from Toshiba Semiconductor and Storage. The series is designed for general-purpose signal isolation in space-constrained applications. The BV suffix typically denotes a specific current transfer ratio ranking within the product line.
TLP130(TP1,F)
The standard TLP137 has a minimum current transfer ratio of 100%.
The BV suffix indicates a specific binning for the current transfer ratio, with a minimum value of 200%.