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The TLP188(GB,E is a single-channel transistor output optocoupler manufactured by Toshiba Semiconductor and Storage. It integrates a Gallium Arsenide infrared LED with a phototransistor within a compact SO6 (4-pin) surface-mount package. The device supports high-temperature operation up to 110°C and provides an isolation voltage of 3750 Vrms. Key electrical specifications include a minimum collector-emitter breakdown voltage of 350 V and a current transfer ratio of at least 100% for the GB rank. These characteristics make it suitable for industrial control and home appliance applications requiring robust signal isolation.
Verify the specific suffix designation when ordering, as variations such as tube or reel packaging affect handling but not electrical function. Confirm RoHS compliance status through official documentation prior to integration. Ensure the selected variant matches the required current transfer ratio rank for the intended application performance. Cross-reference datasheet revisions to guarantee compatibility with existing design parameters.
Select this component when a high voltage rating between 350 V and standard logic levels is required. The GB rank ensures a minimum current transfer ratio of 100%, providing higher gain than standard variants. Consider the SO6 footprint for assembly constraints. Verify that the 110°C maximum operating temperature aligns with the system's thermal management strategy and ambient conditions.
This part belongs to the TLP188 family of photocouplers designed for general-purpose isolation. It shares architectural similarities with the TLP180 series but offers superior voltage ratings. The TLP188 series is engineered to replace older discrete isolation solutions in modern electronic equipment. It serves as a bridge between low-voltage control circuits and high-voltage power stages.
Publicly confirmed substitute part numbers are not available in the provided source material.