TLP5752(D4,E

TLP5752(D4,E

$2.12
  • Description:OPTOISO 5KV 1CH GATE DVR 6SO
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tube

SKU:bb29e12af333 Category: Brand:

  
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Product Detailed Parameters

  • Description:OPTOISO 5KV 1CH GATE DVR 6SO
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tube
  • Technology:Optical Coupling
  • Number of Channels:1
  • Voltage - Isolation:5000Vrms
  • Propagation Delay tpLH / tpHL (Max):150ns, 150ns
  • Pulse Width Distortion (Max):50ns
  • Rise / Fall Time (Typ):15ns, 8ns
  • Current - Output High, Low:2.5A, 2.5A
  • Current - Peak Output:2.5A
  • Voltage - Forward (Vf) (Typ):1.55V
  • Voltage - Output Supply:15V ~ 30V
  • Grade:-
  • Qualification:-
  • Operating Temperature:-40°C ~ 110°C
  • Mounting Type:Surface Mount
  • Package / Case:6-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package:6-SO
  • Common Mode Transient Immunity (Min):35kV/µs
  • Approval Agency:CQC, CSA, cUL, UL, VDE
  • Current - DC Forward (If) (Max):20 mA

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TLP5752(D4,E

Overview

The TLP5752(D4,E is a single-channel optically isolated gate driver manufactured by Toshiba Semiconductor and Storage. It integrates an infrared emitting diode with a high-gain, high-speed photodetector IC to drive IGBTs and MOSFETs. Key electrical parameters include a peak output current of 2.5A for both sourcing and sinking, an isolation voltage of 5000Vrms, and a maximum propagation delay of 150ns. The device operates within a temperature range of -40°C to +110°C, features a typical rise time of 15ns and fall time of 8ns, and requires a supply voltage between 15V and 30V.

Feature Summary

  • Integrates high-gain, high-speed photodetector IC for efficient optical coupling
  • Provides robust insulation with 5000Vrms isolation voltage rating
  • Delivers symmetrical 2.5A peak output current for reliable switching
  • Ensures signal integrity with high common-mode transient immunity

Applications

  • IGBT gate driving in industrial motor drives
  • MOSFET gate driving in power supplies
  • Inverter circuits for renewable energy systems
  • High-voltage switching applications requiring galvanic isolation

Procurement Notes

Verify the specific suffix (D4,E) against the manufacturer's datasheet to confirm package type and compliance status. Confirm RoHS3 compliance and certification requirements such as UL, VDE, or CSA depending on the target market. Ensure the ordering quantity matches the standard tube packaging of 125 units to avoid partial reel issues.

Selection Notes

Select this component when a single-channel driver with 2.5A capability is required for IGBT or MOSFET control. Compare against the TLP5751 if lower current is sufficient, or the TLP5772H for higher temperature tolerance up to 125°C. Ensure the system design accommodates the 6-SOIC package dimensions and the 15V-30V supply voltage range for optimal performance.

Part Context

This part belongs to the TLP575x series of IGBT/MOSFET gate driver couplers from Toshiba. The series is designed to replace traditional discrete optocoupler and driver combinations, offering a compact solution for high-frequency switching applications. The D4 variant typically denotes specific packaging or lead-free processing standards defined by the manufacturer.

FAQ

What is the maximum operating temperature for the TLP5752(D4,E?

The maximum operating temperature is +110°C.

Does this device support both sourcing and sinking currents?

Yes, it provides a peak output current of 2.5A for both high and low states.

TLP5752(D4,ETLP5752(D4,E
$2.12
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