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The TLP5752(D4,E is a single-channel optically isolated gate driver manufactured by Toshiba Semiconductor and Storage. It integrates an infrared emitting diode with a high-gain, high-speed photodetector IC to drive IGBTs and MOSFETs. Key electrical parameters include a peak output current of 2.5A for both sourcing and sinking, an isolation voltage of 5000Vrms, and a maximum propagation delay of 150ns. The device operates within a temperature range of -40°C to +110°C, features a typical rise time of 15ns and fall time of 8ns, and requires a supply voltage between 15V and 30V.
Verify the specific suffix (D4,E) against the manufacturer's datasheet to confirm package type and compliance status. Confirm RoHS3 compliance and certification requirements such as UL, VDE, or CSA depending on the target market. Ensure the ordering quantity matches the standard tube packaging of 125 units to avoid partial reel issues.
Select this component when a single-channel driver with 2.5A capability is required for IGBT or MOSFET control. Compare against the TLP5751 if lower current is sufficient, or the TLP5772H for higher temperature tolerance up to 125°C. Ensure the system design accommodates the 6-SOIC package dimensions and the 15V-30V supply voltage range for optimal performance.
This part belongs to the TLP575x series of IGBT/MOSFET gate driver couplers from Toshiba. The series is designed to replace traditional discrete optocoupler and driver combinations, offering a compact solution for high-frequency switching applications. The D4 variant typically denotes specific packaging or lead-free processing standards defined by the manufacturer.
The maximum operating temperature is +110°C.
Yes, it provides a peak output current of 2.5A for both high and low states.