TLP5771H(D4,E

TLP5771H(D4,E

$2.02
  • Description:OPTOISO 5KV 1CH GATE DVR 6SO
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tube

SKU:b16c93f2b36a Category: Brand:

  
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Product Detailed Parameters

  • Description:OPTOISO 5KV 1CH GATE DVR 6SO
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tube
  • Technology:Optical Coupling
  • Number of Channels:1
  • Voltage - Isolation:5000Vrms
  • Propagation Delay tpLH / tpHL (Max):150ns, 150ns
  • Pulse Width Distortion (Max):50ns
  • Rise / Fall Time (Typ):56ns, 25ns
  • Current - Output High, Low:1A, 1A
  • Current - Peak Output:1A
  • Voltage - Forward (Vf) (Typ):1.65V
  • Voltage - Output Supply:10V ~ 30V
  • Grade:-
  • Qualification:-
  • Operating Temperature:-40°C ~ 125°C
  • Mounting Type:Surface Mount
  • Package / Case:6-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package:6-SO
  • Common Mode Transient Immunity (Min):35kV/µs
  • Approval Agency:CQC, CSA, cUL, UL, VDE
  • Current - DC Forward (If) (Max):8 mA

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TLP5771H(D4,E

Overview

The TLP5771H(D4,E is a single-channel optically isolated gate driver manufactured by Toshiba Semiconductor and Storage. It integrates an infrared LED with a high-gain, high-speed photodetector IC to provide galvanic isolation for power switching applications. The device supports a peak output current of 1A and operates within a supply voltage range of 10V to 30V. Key electrical parameters include a forward voltage of 1.65V, a reverse voltage rating of 5V, and a maximum forward current of 8mA. The unit offers an insulation voltage of 5000 Vrms and functions reliably across a temperature range of -40°C to +125°C. Dynamic performance features a typical rise time of 56ns and a fall time of 25ns, with a power dissipation limit of 20mW.

Feature Summary

  • Integrates an infrared LED with a high-gain, high-speed photodetector IC for efficient optical coupling.
  • Provides robust galvanic isolation with a rated insulation voltage of 5000 Vrms.
  • Features a wide operating temperature range suitable for high-temperature environments up to +125°C.
  • Delivers a peak output current of 1A to drive IGBTs and MOSFETs effectively.

Applications

  • IGBT gate driving in industrial inverters
  • MOSFET gate driving in motor control systems
  • Power conversion circuits requiring high isolation

Procurement Notes

Verify the specific suffix (D4) against the official Toshiba datasheet to confirm package type and lead configuration. Ensure the ordering code matches the required tape-and-reel or tube packaging variant. Confirm RoHS compliance status and VDE certification requirements if applicable to your region. Cross-reference the manufacturer part number with distributor listings to avoid confusion with similar models in the TLP577x series.

Selection Notes

Select this component when a single-channel gate driver with 1A peak current capability is required. It is suitable for designs needing 5000 Vrms isolation between control and power sides. Consider the 10V to 30V supply range compatibility with standard logic levels. Evaluate the thermal management needs given the 20mW power dissipation limit and the -40°C to +125°C operating range for harsh environments.

Part Context

This device belongs to the TLP577xH series of optically isolated gate drivers from Toshiba. The series combines infrared LEDs with integrated photodetector ICs to achieve high-speed signal transmission. These components are designed specifically for driving power semiconductors like IGBTs and MOSFETs in applications demanding high reliability and strong noise immunity through optical isolation.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with alternative gate drivers based on pinout, isolation voltage, and current drive specifications before substitution.

TLP5771H(D4,ETLP5771H(D4,E
$2.02
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