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TLP5832(TP,E is listed in the Logic Output Optoisolators range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is OPTOISOLTR 5KV PUSH PULL 8-SO. Review the specifications below when checking this part for your BOM.
The TLP5832(TP,E is a single-channel IGBT gate drive photocoupler manufactured by Toshiba Semiconductor and Storage. It integrates an AlGaAs LED with a push-pull output IC to provide high-speed switching capabilities for power electronics. Key electrical parameters include a maximum propagation delay of 200 ns, rise time of 15 ns, and fall time of 8 ns. The device supports a forward current of 10 mA with a typical forward voltage of 1.4 V to 1.55 V. It offers robust isolation with a rated insulation voltage of 5000 Vrms and a common-mode transient immunity (CMTI) of 20 kV/µs. Operating temperatures range from -40°C to +110°C.
Verify the specific suffix (TP,E) indicates tape and reel packaging when ordering. Confirm RoHS3 compliance and moisture sensitivity level (MSL 1) requirements for your assembly process. Ensure the supplier provides official datasheets matching the Toshiba Semiconductor and Storage part number to avoid counterfeit components. Check lead times as production cycles may vary.
Select this component when direct IGBT gate drive capability is required within a photovoltaic or motor control system. The ±2.5 A output current eliminates the need for external buffer transistors. Consider the 20 kV/µs CMTI rating if the application involves rapid voltage transients. The SOIC-8 package suits space-constrained PCB layouts compared to wider DIP options.
This device belongs to the TLP5832 series of optically isolated gate drivers. It is designed specifically for replacing discrete driver circuits in high-power switching applications. The integration of the LED and output IC on a single chip ensures consistent performance and reduced board space. It serves as a critical interface between low-voltage control logic and high-voltage power stages.
The device can source and sink a peak output current of ±2.5 A, allowing it to directly drive IGBT gates.
It features a common-mode transient immunity (CMTI) of 20 kV/µs, providing strong rejection against high dv/dt noise in the circuit.
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