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The TLP701A(TP,F) is a single-channel photocoupler manufactured by Toshiba Semiconductor and Storage. It integrates a GaAlAs infrared LED optically coupled to an integrated high-gain output circuit, designed for gate driver applications. The device operates within a temperature range of -40°C to 100°C and features a 5000Vrms isolation voltage. Packaged in a 6-SDIP Gull Wing configuration, it supports surface mount installation. Key electrical characteristics include a typical propagation delay of 50ns and a maximum pulse width distortion of 350ns. The unit is RoHS compliant and UL certified.
Verify the specific suffix (TP,F) corresponds to the tape-and-reel packaging format when ordering. Confirm that the 6-SDIP package dimensions match your PCB footprint requirements. Ensure the operating temperature range of -40°C to 100°C meets your system's environmental specifications. Check for RoHS compliance documentation if required by your manufacturing standards.
Select this component when high-speed isolation is required for driving power switches. The integrated high-gain output simplifies circuit design compared to discrete phototransistor couplers. Consider the 50ns propagation delay for timing-sensitive applications. The SDIP package offers reliable mounting for industrial environments. Verify input current requirements align with your drive circuit capabilities.
This part belongs to the TLP701 series of photocouplers from Toshiba Semiconductor and Storage. The series is characterized by its use in gate driver applications where high isolation voltage and speed are critical. The TLP701A variant specifically denotes the standard version within this family, distinguished by its integrated output structure and GaAlAs LED source.
Public confirmed substitute part numbers are not available in the provided documentation. Consult Toshiba Semiconductor and Storage for official cross-reference data or equivalent product recommendations.
The device provides an isolation voltage rating of 5000Vrms between the input LED and the output circuit.
It utilizes an integrated high-gain output circuit, which is distinct from standard phototransistor outputs and is optimized for gate driving.
The typical propagation delay is specified as 50ns.