Transistor, Photovoltaic Output Optoisolators TLP781F(Y,F) product image

TLP781F(Y,F)

  • Description:OPTOISOLATOR 5KV 1CH TRANS 4-DIP
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tube

SKU:8664dbc5bd92 Category: Brand:

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TLP781F(Y,F) is listed in the Transistor, Photovoltaic Output Optoisolators range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is OPTOISOLATOR 5KV 1CH TRANS 4-DIP. Review the specifications below when checking this part for your BOM.

Transistor, Photovoltaic Output Optoisolators specifications for TLP781F(Y,F)

  • Description:OPTOISOLATOR 5KV 1CH TRANS 4-DIP
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tube
  • Number of Channels:1
  • Voltage - Isolation:5000Vrms
  • Current Transfer Ratio (Min):50% @ 5mA
  • Current Transfer Ratio (Max):150% @ 5mA
  • Turn On / Turn Off Time (Typ):3µs, 3µs
  • Rise / Fall Time (Typ):2µs, 3µs
  • Input Type:DC
  • Output Type:Transistor
  • Voltage - Output (Max):80V
  • Current - Output / Channel:50mA
  • Voltage - Forward (Vf) (Typ):1.15V
  • Current - DC Forward (If) (Max):60 mA
  • Vce Saturation (Max):400mV
  • Operating Temperature:-55°C ~ 110°C
  • Mounting Type:Through Hole
  • Package / Case:4-DIP (0.400", 10.16mm)
  • Supplier Device Package:4-DIP

Transistor, Photovoltaic Output Optoisolators datasheet and documents for TLP781F(Y,F)

TLP781F(Y,F)

Transistor, Photovoltaic Output Optoisolators Overview

The TLP781F(Y,F) is a single-channel transistor output optocoupler manufactured by Toshiba Semiconductor and Storage. It integrates a gallium arsenide infrared emitting diode with a silicon phototransistor in a four-lead plastic DIP package. The device features a minimum collector-emitter breakdown voltage of 80V and a high isolation voltage of 5000 Vrms. The Y rank specifies a current transfer ratio (CTR) of at least 200% at a forward current of 5mA, ensuring efficient signal transmission. It operates within a temperature range of -25°C to 85°C and supports a maximum forward current of 25mA.

Transistor, Photovoltaic Output Optoisolators Feature Summary

  • High current transfer ratio performance with the Y rank providing a minimum CTR of 200% for enhanced signal fidelity
  • Robust electrical isolation capability rated at 5000 Vrms between input and output circuits
  • Integrated GaAs infrared LED coupled with a silicon phototransistor for reliable optical signal transmission
  • DIP4 package design optimized for through-hole mounting with extended creepage distances

Transistor, Photovoltaic Output Optoisolators Applications

  • Office equipment signal interfaces
  • Household appliance control circuits
  • Solid state relay driver stages
  • Switching power supply feedback loops
  • Signal transmission between different voltage domains

Transistor, Photovoltaic Output Optoisolators Procurement Notes

Verify the specific suffix designation matches the required current transfer ratio rank, as the Y rank indicates a minimum CTR of 200%. Confirm the package variant corresponds to the F designation for the 10.16mm pitch DIP4 form factor. Ensure compliance with relevant safety certifications such as UL, VDE, and CQC for the intended application environment. Cross-reference the datasheet for thermal derating curves if operating near the maximum temperature limit.

Transistor, Photovoltaic Output Optoisolators Selection Notes

Select this component when a high current transfer ratio is critical for driving subsequent logic or relay stages efficiently. The Y rank ensures superior gain compared to standard ranks, reducing the required input drive current. Consider the 10.16mm pitch DIP4 package if board space allows for larger spacing requirements. Verify that the 80V collector-emitter voltage rating exceeds the maximum load voltage in the target circuit design.

Transistor, Photovoltaic Output Optoisolators Part Context

This device belongs to the TLP781 series of photocouplers designed for general-purpose isolation applications. The series utilizes a GaAs IRED and silicon phototransistor configuration to provide high-speed response and high isolation voltage. The TLP781F variant specifically offers an extended lead pitch to facilitate surface mounting with increased creepage distance, addressing safety requirements in high-voltage environments.

Transistor, Photovoltaic Output Optoisolators Replacement Considerations

TLP781(D4-GB-LF7)

TLP781F(Y,F)TLP781F(Y,F)

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