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TLP781(GB-LF6,F) is listed in the Transistor, Photovoltaic Output Optoisolators range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is OPTOISOLATOR 5KV 1CH TRANS 4-SMD. Review the specifications below when checking this part for your BOM.
The TLP781(GB-LF6,F) is a transistor output optocoupler manufactured by Toshiba Semiconductor and Storage. It integrates a gallium arsenide infrared emitting diode with a silicon phototransistor in a four-lead plastic DIP package. The device provides high isolation voltage of 5000 Vrms between input and output circuits. Key electrical parameters include a collector-emitter breakdown voltage of 80V, a maximum forward current of 60mA, and a typical forward voltage of 1.3V. The unit operates within a temperature range of -55°C to 110°C.
Verify the specific suffix LF6 against official Toshiba documentation to confirm lead forming specifications and creepage distance requirements. Ensure compatibility with standard DIP4 mounting processes. Cross-reference datasheet revisions to confirm active status and compliance certifications such as UL or VDE approvals before finalizing procurement.
Select this component for applications requiring reliable galvanic isolation with moderate speed performance. Consider the 80V collector-emitter voltage rating for low-voltage switching tasks. Evaluate the 5000 Vrms isolation barrier for safety-critical interfaces. Confirm that the DIP4 package dimensions fit the target PCB layout constraints.
This part belongs to the TLP781 series of transistor output optocouplers from Toshiba. The series is designed for general-purpose signal isolation in compact packages. The GB variant typically denotes specific lead forming options for surface mounting or enhanced creepage distances compared to standard through-hole versions.
Public confirmed substitute part numbers are not available in the provided source material. Consult official Toshiba cross-reference guides for verified alternatives.
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