TPCP8F01(TE85L,F,M

TPCP8F01(TE85L,F,M

  • Description:X35 PB-F POWER MOSFET TRANSISTOR
  • Series:-

SKU:45c162491209 Category: Brand:

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Product Detailed Parameters

  • Description:X35 PB-F POWER MOSFET TRANSISTOR
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR)
  • Transistor Type:PNP, N-Channel
  • Applications:Load Switch
  • Voltage - Rated:20V
  • Current Rating (Amps):3A
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:8-SMD, Flat Leads
  • Supplier Device Package:PS-8

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TPCP8F01(TE85L,F,M

Overview

The TPCP8F01 is a multi-chip discrete device manufactured by Toshiba Semiconductor and Storage, integrating a Silicon PNP Epitaxial Transistor with a Field Effect Transistor of the Silicon N Channel MOS Type. Designed for switching and load switch applications, this component features a high DC current gain ranging from 200 to 500 at an IC of -0.5 A. It provides low collector-emitter saturation voltage of -0.19 V maximum and achieves high-speed switching with a fall time of 40 ns typical. The package is a compact surface-mount type weighing approximately 0.017 g.

Feature Summary

  • Integrates a main switch PNP transistor and an N-channel MOS FET drive circuit within a single multi-chip device.
  • Provides high DC current gain for efficient signal amplification and control.
  • Features low collector-emitter saturation voltage to minimize power loss during conduction.
  • Supports high-speed switching operations with rapid fall times.

Applications

  • Switching Applications
  • Load Switch Applications

Procurement Notes

Verify the specific ordering suffix (TE85L,F,M) against official Toshiba documentation to confirm tape-and-reel packaging specifications and terminal numbering orientation. Ensure that the absolute maximum ratings, particularly regarding junction temperature and thermal derating on FR4 boards, are strictly adhered to in the final design to maintain product reliability.

Selection Notes

Select this component when a compact solution combining a high-gain PNP driver with an N-channel MOSFET is required. Consider its low saturation voltage and fast switching speed for efficiency-critical designs. Verify that the operating conditions remain within the specified absolute maximum ratings, especially concerning pulse currents and thermal dissipation limits on standard PCB layouts.

Part Context

This part belongs to Toshiba's multi-chip discrete device portfolio, specifically designed to simplify circuit designs by combining complementary bipolar and field-effect technologies. It serves as a specialized alternative to discrete component assemblies, offering space savings and optimized performance characteristics for integrated switching functions in general electronics applications.

Replacement Considerations

Public confirmed substitute part numbers: None available.

TPCP8F01(TE85L,F,MTPCP8F01(TE85L,F,M

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