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The TPS2411RMSR is a hot swap voltage controller from Texas Instruments designed for N+1 and OR-ing power rail applications. It operates within an input voltage range of 0.8 V to 16.5 V. The device features a quiescent current (IQ) of 1.2 A and an Igate source capability of 293 uA. It is housed in a 14-pin UQFN (RMS) package and supports an operating temperature range from -40°C to 85°C. The component integrates protection features including overvoltage, undervoltage, and thermal shutdown.
Verify the specific ordering suffix 'RMSR' corresponds to the tape-and-reel packaging format and the exact pin configuration required for your PCB layout. Confirm that the RoHS compliance status matches your environmental regulations. Ensure the supplier provides the original Texas Instruments datasheet to validate the part number authenticity and manufacturing origin before finalizing the purchase order.
Select this component when designing systems requiring precise current limiting and soft-start capabilities for redundant power architectures. It is suitable for applications needing low standby power consumption alongside robust fault protection. Consider the external MOSFET selection carefully, as the controller relies on external components to handle the main load current and define specific threshold parameters.
This part belongs to the TPS241x family of full-featured power rail controllers. These devices are engineered to manage power distribution in high-reliability environments. The RMSR variant specifically denotes the reel-based packaging option, distinguishing it from tube-packaged counterparts while maintaining identical electrical performance and functional characteristics within the series.
Consult official Texas Instruments documentation for direct cross-reference part numbers. Verify compatibility regarding pinout, voltage ratings, and control logic before substituting. Generic equivalents may not support the specific N+1 and OR-ing algorithms or protection thresholds defined by the original design.
It works in conjunction with an external N-channel MOSFET to simulate a diode with a very low forward voltage drop, minimizing power loss compared to standard diodes.
The maximum gate-source voltage (VGS) rating is 11.5 V, which must be respected when selecting compatible external MOSFETs.