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TPS259230DRCR is listed in the Current Regulation/Management range at ChipApex. The manufacturer field lists Texas Instruments. Its product description is IC ELECTRONIC FUSE 8% 10VSON. Review the specifications below when checking this part for your BOM.
The TPS259230DRCR is a single-channel hot-swap voltage controller and eFuse from Texas Instruments, housed in a VSON-10 package. It operates within an input voltage range of 4.5 V to 5.5 V and supports load currents from 1 A to 5 A. The device features a typical on-resistance of 28 mΩ and includes an integrated driver for an external blocking FET. Key electrical parameters include a maximum supply voltage of 18 V, a quiescent current of 470 µA, and an operating temperature range of -40°C to +85°C.
Verify the specific suffix DRCR confirms the VSON-10 package and tape-and-reel orientation. Confirm RoHS compliance status through the manufacturer's official documentation. Ensure the external blocking FET selection aligns with the controller's gate drive capabilities and system voltage requirements.
Select this component when a 5V rail requires hot-swap capability with low on-resistance. The integrated blocking FET driver distinguishes it from standard eFuses lacking reverse current protection. Verify that the 28 mΩ resistance meets thermal dissipation limits at the maximum 5 A load current.
This part belongs to the TPS25923x series of 5V eFuses. Unlike variants such as the TPS259250 which may differ in internal architecture or resistance, the TPS259230 specifically emphasizes the inclusion of an external blocking FET driver for enhanced safety in bidirectional bus environments.
The TPS259231DRCR is a confirmed substitute within the same family, offering identical functionality and pinout compatibility while maintaining the 28 mΩ on-resistance specification.
No, it does not. The device requires an external N-channel MOSFET connected to the DRV pin to provide reverse current blocking functionality.
This represents the typical on-resistance (RDS(on)) of the internal high-side switch, influencing conduction losses and thermal performance during normal operation.
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