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The TQP4M0008 is a GaAs FET single-pole, double-throw (SPDT) reflective RF switch designed for broadband applications. It operates from 100 MHz to 6 GHz with a compact 6-pin 2x2 mm surface-mount leadless package. Key electrical parameters include an insertion loss of 0.85 dB at 6 GHz, typical off-isolation of 17 dB, and a P1dB compression point of 37 dBm. The input third-order intercept point (IIP3) is 56 dBm. It supports 50-ohm impedance and functions within a temperature range of -40°C to 95°C.
Verify the specific ordering suffix required for tape-and-reel or cut-tape quantities against manufacturer specifications. Confirm RoHS compliance status and moisture sensitivity level (MSL 1) requirements for your assembly process. Ensure the selected variant matches the intended frequency range and power handling needs for your specific RF application design.
Select this component when a low-insertion-loss SPDT switch is needed across the 100 MHz to 6 GHz spectrum. The high IIP3 and P1dB values make it suitable for linear signal routing in multi-band transceivers. Consider the 2x2 mm footprint for PCB layout constraints compared to larger packages offering similar performance metrics.
This device belongs to Qorvo's portfolio of RF switches utilizing GaAs FET technology. It serves as a core switching element in wireless communication systems requiring reliable signal path selection between antennas and transceivers. The product line emphasizes broadband coverage and minimal signal degradation in modern mobile and fixed wireless applications.
Consult official Qorvo documentation for direct pin-compatible substitutes. Verify that any alternative maintains the 100 MHz to 6 GHz operational bandwidth and comparable isolation levels. Ensure thermal and mechanical specifications align with existing board designs before substitution.
The TQP4M0008 provides broadband performance up to 6 GHz.
It is packaged in a RoHS-compliant, compact 6-pin 2x2 mm surface-mount leadless package.